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| SI2320DS New Product Vishay Siliconix N-Channel 200-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 200 rDS(on) (W) 7 @ VGS = 10 V ID (A) "0.28 TO-236 (SOT-23) G 1 3 D S 2 Top View SI2320DS (D0)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Currentb Avalanche Currentb L = 0.1 mH Single Avalanche Energy Continuous Source Current (Diode Conduction)a Power Dissipationa Operating Junction and Storage Temperature Range TA= 25_C TA= 70_C TA= 25_C TA= 70_C Symbol VDS VGS ID IDM IAS EAS IS 5 sec "20 "0.28 "0.22 Steady State "200 Unit V "0.22 "0.17 "0.5 "0.5 0.013 "1 mJ A 0.75 W 0.48 -55 to 150 _C A 1.25 PD TJ, Tstg 0.80 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot Notes a. Surface Mounted on 1" x 1" FR4 Board. b. Pulse width limited by maximum junction temperature Document Number: 71084 S-63640--Rev. A, 01-Nov -98 www.vishay.com S FaxBack 408-970-5600 t v 5 sec Steady State Steady State Symbol RthJA RthJF Typical 75 120 40 Maximum 100 166 50 Unit _C/W 2-1 SI2320DS Vishay Siliconix New Product SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-Resistancea Forward Transconductancea Diode Forward Voltage V(BR)DSS VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VGS = 0 V, ID = 1 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 160 V, VGS = 0 V VDS = 160 V, VGS = 0 V, TJ = 70_C VDS w 15 V, VGS = 10 V VGS = 10 V, ID = 0.2 A VDS = 15 V, ID = 0.4 A IS = 1 A, VGS = 0 V 0.5 5.8 13 1.2 7 200 V 2 "100 1 75 nA mA A W S V Symbol Test Conditions Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Qg Qgs Qgd VDS = 100 V, VGS = 10 V, ID = 0.2 A V V 02 1.1 0.31 0.375 1.6 nC C Switching Turn-On Delay Time Rise Time Turn-Off Delay Time Fall-Time Source-Drain Reverse Recovery Time td(on) tr td(off) tf trr IF = 1 A, di/dt = 100 A/ms VDD = 100 V, RL = 500 W V, ID ^ 0.2 A, VGEN = 10 V RG = 6 W 02A V, 6 9 9 65 105 10 15 ns 15 100 160 ns Notes a. Pulse test: PW v300 ms duty cycle v2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 1.0 VGS = 10, 9 V 0.8 I D - Drain Current (A) 8V I D - Drain Current (A) 0.8 1.0 Transfer Characteristics 0.6 7V 0.6 0.4 6V 0.2 4, 3 V 0 0 2 4 6 8 10 5V 0.4 TC = 125_C 0.2 25_C 0 0 2 4 6 8 10 -55_C VDS - Drain-to-Source Voltage (V) www.vishay.com S FaxBack 408-970-5600 VGS - Gate-to-Source Voltage (V) Document Number: 71084 S-63640--Rev. A, 01-Nov -98 2-2 SI2320DS New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 12 r DS(on) - On-Resistance ( W ) 70 60 C - Capacitance (pF) 50 40 30 20 Coss 2 10 0 0 0.2 0.4 0.6 0.8 1.0 0 20 40 60 80 100 Crss Vishay Siliconix Capacitance 10 Ciss 8 VGS = 10 V 6 4 0 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 20 V GS - Gate-to-Source Voltage (V) VDS = 100 V ID = 0.2 A 16 2.5 On-Resistance vs. Junction Temperature VGS = 10 V ID = 0.2 A 2.0 12 r DS(on) - On-Resistance (W) (Normalized) 1.0 1.5 2.0 1.5 8 1.0 4 0.5 0 0 0.5 Qg - Total Gate Charge (nC) 0 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 10 20 On-Resistance vs. Gate-to-Source Voltage 1 TJ = 150_C r DS(on) - On-Resistance ( W ) 16 ID = 0.2 A 12 I S - Source Current (A) 0.1 8 0.01 TJ = 25_C 4 0.001 0 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) 0 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) Document Number: 71084 S-63640--Rev. A, 01-Nov -98 www.vishay.com S FaxBack 408-970-5600 2-3 SI2320DS Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.9 60 50 ID = 250 mA 0.3 Power (W) Single Pulse Power 0.6 V GS(th) Variance (V) 40 TA = 25_C 30 0.0 20 -0.3 10 -0.6 -50 0 -25 0 25 50 75 100 125 150 0.01 0.1 1 Time (sec) 10 100 600 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 PDM 0.05 t1 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 166_C/W 3. TJM - TA = PDMZthJA(t) t1 t2 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) 4. Surface Mounted 10 100 600 www.vishay.com S FaxBack 408-970-5600 2-4 Document Number: 71084 S-63640--Rev. A, 01-Nov -98 |
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